Microelectronics

image o a silicon wafer patterned with devices

Microelectronics Research Program

Goal - To develop techniques and standards that address critical metrology needs of the U.S. semiconductor industry, including those defined by industry roadmaps such as the Semiconductor Industry Association (SIA). Much of our work is conducted under the auspices of the NIST National Semiconductor Metrology Program (NSMP).

Technical Contact: Dr. John Henry Scott

Semiconductor Related Technical Activities Reports

Electron Probe Analysis, Scanning Electron Microscopy

New Analysis and Correction Procedures that Enable an Order-of-Magnitude Improvement in the Accuracy of Compositional Determinations of AlXGa1-XAs thin films with the Electron Microprobe

Fabrication and Electron Microprobe Characterization of Barium-Strontium-Titanate (BST) Films

Monte Carlo Methods For Optimizing The Quantitative Analysis Of Thin Layers, Microparticles And Irregular Surfaces

Phase Identification of Individual Crystalline Particles by Electron Backscatter Diffraction (EBSD)

Auger and X-Ray Photoelectron Spectroscopy

Role of uncertainties associated with fundamental parameters and surface/interface gradation in model Grazing Incidence X-ray Photoelectron Spectroscopy calculations

Solving Problems in Semiconductor Device Processing

New Databases for Surface Analysis by Auger-Electron Spectroscopy and X-Ray Photoelectron Spectroscopy

Effects of Elastic-Electron Scattering on Measurements of Silicon Dioxide Film Thicknesses by X-ray Photoelectron Spectroscopy

Thickness Measurements of SEMATECH Gate Dielectrics by GIXPS

Standard Test Data for Comparison of Curve-Fitting Approaches in Spectral Data Analysis

Secondary Ion Mass Spectrometry

Depth Profiling of Organic Films using the Time-of-Flight SIMS

Ultra Shallow Depth Profiling by ToF-SIMS

Carbon Cluster Primary Ion Beam SIMS for Organic and Semiconductor Surface Characterizatio

Optical Techniques and Scanned Probe Microscopoy

Microwave Evanescent Probe Microscopy for Materials Analysis

Information on Surface Dynamics of Dry Etching From Atomic Force Microscopy

Semiconductor Research Projects Conducted in Support of the NIST National Semiconductor Metrology Program

Two- and Three-Dimensional Profiling

Advanced Gate Dielectric Metrology

Ultra Shallow Depth Profiling by ToF-SIMS

As and P Implant Standards

Phase Identification From sub 200 nm Particles by Electron Backscatter Diffraction (EBSD)

Monte Carlo Methods For Optimizing the Quantitative Analysis Of Thin Layers, Microparticles and Irregular Surfaces