Etch processes are widespread in semiconductor device manufacturing. Critical control of surface smoothness, etch anisotropy, and surface composition in the case of compound semiconductors, during etching will be required to meet roadmap goals for device reduction. Understanding the effects of etching on morphology, roughness, and feature development will also be critical in developing advanced processes for Micro-Electro-Mechanical Systems (MEMS) and in developing the analogous optoelectronics platform, Micro-Opto-Electro-Mechanical Systems (MOEMS). Optimizing a dry process for a particular application requires understanding and controlling surface morphology development, anisotropy, and surface composition. These characteristics are controlled by the surface dynamical and kinetic. This research program is focused on investigating surface dynamical processes (surface diffusion, desorption, etc.) and kinetic factors that control surface morphology and composition, etch rate, and anisotropy during etching.
The evolution of surface morphology and composition during plasma etching are followed using a combination of in situ techniques [Reflection High Energy Electron Diffraction (RHEED), photoelectron spectroscopy, Auger Spectroscopy] to characterize surface composition and crystalline structure, along with ex situ Atomic Force Microscopy (AFM) to characterize surface morphology. Experiments are performed in an ultra-high vacuum (UHV) analysis system equipped for remote plasma etching as a function of substrate temperature, plasma conditions, etc. A major focus of this work is on developing techniques for extracting information about surface dynamics from AFM data. The surface roughness/morphology carries the imprint of the dynamical processes occurring during etching.
Steve Robey
Phone:(301) 975-4152
Fax:(301) 926-6689
Email: steven.robey@nist.gov
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