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Development and Evaluation of Calibration Methodology for RTP Temperature Measurements NIST is developing and evaluating a calibration methodology for surface temperature measurements of silicon wafers in rapid thermal processing equipment. Improved wafer semiconductor measurement is critical to obtain reproducible, optimum quality in single wafer semiconductor device fabrication. The calibration methodology will be developed in three phases; the establishment of a calibration facility for thin film surface temperature measurements with a known accuracy, the development of the materials technology of thin film temperature measurement of silicon wafers up to 1100 °C, and the evaluation of test wafers for temperature measurement under rapid thermal processing conditions. The goal of this project is to enable measurements of absolute temperature of silicon wafers in rapid thermal processing to better than 2 °C total uncertainty. The project will utilize and be coordinated with the Radiometric Physics Division’s project on improved RTP radiation thermometry to simulate industrial conditions for a full size wafer. For more information, contact Kenneth Kreider at kenneth.kreider@nist.gov |
Last Updated on: 2/25/04
| Contacts Tests and Fees Calibration Uncertainties Industrial Thermometers Low Temperature SPRTs Thermocouples |
| Bibliography Fixed Points Humidity IPRTs ITS 90 Liquid in Glass Meas. Assurance Publications RTP SPRTs SRMs Tempmeko 2001 Thermistors Thermocouples Thermodynamic |
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Precision Themometry Workshop: ITS 90 Fixed Point Cell Mini Workshop: Liquid In
Glass Thermometer Mini Workshop: |
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Calibration for RTP |
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