Process Sensing Group


Process Measurements Division


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Created: January 2003
Plasma Process Metrology
Goal: Provide advanced measurement techniques, data, and models needed to characterize plasma etching and deposition processes important to the semiconductor industry, enabling continued progress in model-based reactor design, process development, and process control.


Objective: Provide advanced measurement techniques, data, and models needed to characterize plasma processes used by the semiconductor industry, enabling continued progress in model-based reactor design and process control.

Scientific Staff:

         Mark A. Sobolewski
         Kristen L. Steffens
         Michael J. Carrier

NIST Internal Collaborations:

         Eric Benck  (Physics Lab)
         Karen Siegrist (Physics Lab)
         James Olthoff  (EEEL)
         Yicheng Wang (EEEL)


Research Areas
Electrical Characteristics of Plasmas
2-D Optical Diagnostics
Plasma R&D Reactor
Electrical Characteristics
of Plasmas
2-D Optical Diagnostics in Plasmas - densities, emission, and temperatures
New Plasma R&D Reactor